ELECTRICAL-PROPERTIES OF MANGANESE DOPED GA1-XINXAS GROWN BY LIQUID-PHASE EPITAXY

被引：8

作者：

PHATAK, SB

BEDAIR, SM

FUJITA, S

机构：

[1] N CAROLINA STATE UNIV,RALEIGH,NC 27650

[2] RES TRIANGLE INST,RES TRIANGLE PK,NC 27709

来源：

SOLID-STATE ELECTRONICS | 1980年 / 23卷 / 08期

关键词：

D O I：

10.1016/0038-1101(80)90100-8

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：839 / &

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