REACTIVE ADSORPTION AND DIFFUSION OF TI ON SI(001) BY SCANNING-TUNNELING-MICROSCOPY

被引：32

作者：

ISHIYAMA, K ^{[1
]}

TAGA, Y ^{[1
]}

ICHIMIYA, A ^{[1
]}

机构：

[1] NAGOYA UNIV,DEPT APPL PHYS,NAGOYA,AICHI 46401,JAPAN

来源：

PHYSICAL REVIEW B | 1995年 / 51卷 / 04期

关键词：

D O I：

10.1103/PhysRevB.51.2380

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Scanning tunneling microscopy has been used to provide the atomic view of the reaction and diffusion of Ti and Si(001) at the monatomic adsorption stage. Two monatomic adsorption structures below and above 440 K have been found. The characteristic adsorption below 440 K is a Ti atom at the pedestal site on a dimer row. The high-temperature adsorption structure above 440 K is adsorption at a dimer vacancy induced by a dimer ejection process on the structural conversion path. The high-temperature adsorption structure shows one-dimensional hopping motion along a dimer row. Measurement of the hop rate gives the activation energy for diffusion and the prefactor of ED=1.80.1 eV and H0=10141 sec-1, respectively. The growth features and the diffusion mechanism can be interpreted in terms of Ti-Si bond formation. © 1995 The American Physical Society.

引用

页码：2380 / 2386

页数：7

共 17 条

[1] INTERFACE FORMATION OF W EVAPORATED ON SI(111) (7X7) [J].