TITANIUM DIFFUSION IN SILICON

被引:66
作者
HOCINE, S
MATHIOT, D
机构
关键词
D O I
10.1063/1.100446
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:1269 / 1271
页数:3
相关论文
共 6 条
  • [1] BOLDYREV VP, 1977, SOV PHYS SEMICOND+, V11, P709
  • [2] TITANIUM IN SILICON AS A DEEP LEVEL IMPURITY
    CHEN, JW
    MILNES, AG
    ROHATGI, A
    [J]. SOLID-STATE ELECTRONICS, 1979, 22 (09) : 801 - 808
  • [3] van Wezep D. A., 1985, J ELECTRON MATER A, V14A, P863
  • [4] VANWEZEP DA, 1985, 13TH INT C DEF SEM
  • [5] COMPLETE ELECTRICAL CHARACTERIZATION OF RECOMBINATION PROPERTIES OF TITANIUM IN SILICON
    WANG, AC
    SAH, CT
    [J]. JOURNAL OF APPLIED PHYSICS, 1984, 56 (04) : 1021 - 1031
  • [6] TRANSITION-METALS IN SILICON
    WEBER, ER
    [J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1983, 30 (01): : 1 - 22