PHOTOSENSITIVE ETCHING OF SILICON

被引：4

作者：

BRAUN, JH

机构：

来源：

关键词：

D O I：

10.1149/1.2428141

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：588 / 589

页数：2

共 7 条

[1]

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BELL SYSTEM TECHNICAL JOURNAL, 1955, 34 (01) :129-176

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[4]

EVERS DD, 1956, Patent No. 2767137

[5] JUNCTION DELINEATION IN SILICON BY GOLD CHEMIPLATING [J].

SILVERMAN, SJ ;

BENN, DR .

[6] ON THE MECHANISM OF CHEMICALLY ETCHING GERMANIUM AND SILICON [J].

TURNER, DR .

[7] 2 CHEMICAL STAINS FOR MARKING P-N JUNCTIONS IN SILICON [J].

WHORISKEY, PJ .