LIGHT-INDUCED EFFECTS ON DOPED-HYDROGENATED AND UNDOPED-HYDROGENATED AMORPHOUS-SILICON

被引：6

作者：

PARK, JS

HAN, MK

LEE, CH

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1988年 / 64卷 / 04期

关键词：

D O I：

10.1063/1.341720

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2107 / 2112

页数：6

共 21 条

[1]

ANDERSON DA, 1982, PHILOS MAG B, V45, P1, DOI 10.1080/01418618208243899

[2] TRANSPORT PROPERTIES OF DOPED AMORPHOUS SILICON [J].

BEYER, W ;

OVERHOF, H .

SOLID STATE COMMUNICATIONS, 1979, 31 (01) :1-4

[3] AMORPHOUS SILICON SOLAR-CELL [J].

CARLSON, DE ;

WRONSKI, CR .

APPLIED PHYSICS LETTERS, 1976, 28 (11) :671-673

[4]

CHEN SC, 1981, PHYS REV B, V23, P5322

[5] LIGHT-INDUCED DANGLING BONDS IN HYDROGENATED AMORPHOUS-SILICON [J].

DERSCH, H ;

STUKE, J ;

BEICHLER, J .

APPLIED PHYSICS LETTERS, 1981, 38 (06) :456-458

[6] CHARACTERIZATION OF GLOW-DISCHARGE DEPOSITED A-SI-H [J].

FRITZSCHE, H .

SOLAR ENERGY MATERIALS, 1980, 3 (04) :447-501

[7] LIGHT-INDUCED EFFECTS IN SCHOTTKY DIODES ON HYDROGENATED AMORPHOUS-SILICON [J].

JOUSSE, D ;

BASSET, R ;

DELIONIBUS, S ;

BOURDON, B .

APPLIED PHYSICS LETTERS, 1980, 37 (02) :208-211

[8]

KNIGHTS JC, 1978, PHILOS MAG B, V37, P467, DOI 10.1080/01418637808225790

[9] OBSERVATION OF PHOTOINDUCED CHANGES IN THE BULK-DENSITY OF GAP STATES IN HYDROGENATED AMORPHOUS-SILICON [J].

LANG, DV ;

COHEN, JD ;

HARBISON, JP ;

SERGENT, AM .

APPLIED PHYSICS LETTERS, 1982, 40 (06) :474-476

[10] HYDROGENATED AMORPHOUS-SILICON PRODUCED BY LASER-INDUCED CHEMICAL VAPOR-DEPOSITION OF SILANE [J].

MEUNIER, M ;

FLINT, JH ;

ADLER, D ;

HAGGERTY, JS .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 1983, 59-6 (DEC) :699-702

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