HYDROGENATED AMORPHOUS-SILICON PRODUCED BY LASER-INDUCED CHEMICAL VAPOR-DEPOSITION OF SILANE

被引：13

作者：

MEUNIER, M

FLINT, JH

ADLER, D

HAGGERTY, JS

机构：

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1983年 / 59-6卷 / DEC期

关键词：

D O I：

10.1016/0022-3093(83)90267-3

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：699 / 702

页数：4

共 14 条

[1] RETARDING CRYSTALLIZATION OF CVD AMORPHOUS-SILICON BY ALLOYING [J].

BOOTH, DC ;

ALLRED, DD ;

SERAPHIN, BO .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 1980, 35-6 (JAN-) :213-218

[2] CHARACTERIZATION OF GLOW-DISCHARGE DEPOSITED A-SI-H [J].

FRITZSCHE, H .

SOLAR ENERGY MATERIALS, 1980, 3 (04) :447-501

[3]

GATTUSO TR, 1983, LASER DIAGNOSTICS PH, V17, P215

[4] ELECTRON-SPIN-RESONANCE IN DOPED CVD AMORPHOUS-SILICON FILMS [J].

HASEGAWA, S ;

KASAJIMA, T ;

SHIMIZU, T .

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1981, 43 (01) :149-156

[5] THE ROLE OF HYDROGEN IN AMORPHOUS-SILICON FILMS DEPOSITED BY THE PYROLYTIC DECOMPOSITION OF SILANE [J].

HEY, P ;

SERAPHIN, BO .

SOLAR ENERGY MATERIALS, 1982, 8 (1-3) :215-230

[6] PHYSICAL-PROPERTIES OF AMORPHOUS CVD SILICON [J].

HIROSE, M .

JOURNAL DE PHYSIQUE, 1981, 42 (NC4) :705-714

[7] TEMPERATURE-VARIATION OF THE ABSORPTION-EDGE OF CVD AMORPHOUS AND POLYCRYSTALLINE SILICON [J].

JANAI, M ;

KARLSSON, B .

SOLAR ENERGY MATERIALS, 1979, 1 (5-6) :387-395

[8] HYDROGEN ELIMINATION DURING THE GLOW-DISCHARGE DEPOSITION OF A-SI-H ALLOYS [J].

KAMPAS, FJ ;

GRIFFITH, RW .

APPLIED PHYSICS LETTERS, 1981, 39 (05) :407-409

[9]

MEUNIER M, J ELEC MAT

[10]

MEUNIER M, UNPUB

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