HYDROGEN ELIMINATION DURING THE GLOW-DISCHARGE DEPOSITION OF A-SI-H ALLOYS

被引：62

作者：

KAMPAS, FJ

GRIFFITH, RW

机构：

来源：

APPLIED PHYSICS LETTERS | 1981年 / 39卷 / 05期

关键词：

D O I：

10.1063/1.92754

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：407 / 409

页数：3

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共 16 条

[1] DENSITY OF STATES IN GAP OF TETRAHEDRALLY BONDED AMORPHOUS-SEMICONDUCTORS
ADLER, D
[J]. PHYSICAL REVIEW LETTERS, 1978, 41 (25) : 1755 - 1758
[2] RETARDING CRYSTALLIZATION OF CVD AMORPHOUS-SILICON BY ALLOYING
BOOTH, DC
ALLRED, DD
SERAPHIN, BO
[J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1980, 35-6 (JAN-) : 213 - 218
[3] QUANTITATIVE-ANALYSIS OF HYDROGEN IN GLOW-DISCHARGE AMORPHOUS SILICON
BRODSKY, MH
FRISCH, MA
ZIEGLER, JF
LANFORD, WA
[J]. APPLIED PHYSICS LETTERS, 1977, 30 (11) : 561 - 563
[4] SOME ASPECTS OF SILICON RADICAL CHEMISTRY
DAVIDSON, IM
[J]. QUARTERLY REVIEWS, 1971, 25 (01): : 111 - &
[5] GROWTH-MORPHOLOGY AND DEFECTS IN PLASMA-DEPOSITED A-SI-H FILMS
KNIGHTS, JC
[J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1980, 35-6 (JAN-) : 159 - 170
[6] DEFECTS IN PLASMA-DEPOSITED A-SI-H
KNIGHTS, JC
LUCOVSKY, G
NEMANICH, RJ
[J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1979, 32 (1-3) : 393 - 403
[7] STRUCTURAL INTERPRETATION OF THE VIBRATIONAL-SPECTRA OF A-SI-H ALLOYS
LUCOVSKY, G
NEMANICH, RJ
KNIGHTS, JC
[J]. PHYSICAL REVIEW B, 1979, 19 (04): : 2064 - 2073
[8] MCMILLAN JA, 1979, J APPL PHYS, V50, P4238
[9] INFLUENCE OF PREPARATION CONDITIONS ON THE HYDROGEN CONTENT OF AMORPHOUS GLOW-DISCHARGE SILICON
MILLEVILLE, M
FUHS, W
DEMOND, FJ
MANNSPERGER, H
MULLER, G
KALBITZER, S
[J]. APPLIED PHYSICS LETTERS, 1979, 34 (02) : 173 - 174
[10] DEVICE PHYSICS AND DESIGN OF A-SI ITO-P-I-N HETEROFACE SOLAR-CELLS
OKAMOTO, H
NITTA, Y
YAMAGUCHI, T
HAMAKAWA, Y
[J]. SOLAR ENERGY MATERIALS, 1980, 2 (03): : 313 - 325