ELECTRON-MICROSCOPY OF ULTRA-THIN BURIED LAYERS IN INP AND INGAAS

被引：10

作者：

GRIGORIEFF, N ^{[1
]}

CHERNS, D ^{[1
]}

YATES, MJ ^{[1
]}

HOCKLY, M ^{[1
]}

PERRIN, SD ^{[1
]}

AYLETT, MR ^{[1
]}

机构：

[1] BT LABS,IPSWICH IP5 7RE,ENGLAND

来源：

PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES | 1993年 / 68卷 / 01期

关键词：

D O I：

10.1080/01418619308219361

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The large-angle convergent-beam electron diffraction (LACBED) technique has been used to measure layer thicknesses and strain of ultra-thin arsenic and phosphorus-rich layers produced by temporary arsine and phosphine purges in the metal-organic vapour phase epitaxy growth of InP and InGaAs. The paper describes how the technique, previously used to investigate single quantum wells of thickness between 8 and 30 angstrom, has been extended to layers of thicknesses of one to two monolayers. It is shown that LACBED patterns can be recorded under conditions in which only a small constant inelastic background and elastic scattering need be considered and can be analysed in detail using a kinematical approach. By combining LACBED results with dark-field images showing the presence of interfacial steps and high-resolution images from cross-sectional samples, a more detailed understanding of the growth interrupt layers is derived.

引用

页码：121 / 136

页数：16

共 13 条

[1]

BUFFAT PA, 1989, NATO ADV SCI I B-PHY, V203, P319

[2]

CHERNS D, 1989, NATO ADV SCI I B-PHY, V203, P59

[3] CONVERGENT BEAM DIFFRACTION STUDIES OF INTERFACES, DEFECTS, AND MULTILAYERS [J].