STRICT THERMAL NITRIDATION SELECTIVITY BETWEEN SI AND GE USED AS A CHEMICAL PROBE OF THE OUTERMOST LAYER OF SI1-XGEX ALLOYS AND GE/SI(001) OR SI/GE(001) HETEROSTRUCTURES

被引:11
作者
AUBEL, D [1 ]
DIANI, M [1 ]
BISCHOFF, JL [1 ]
BOLMONT, D [1 ]
KUBLER, L [1 ]
机构
[1] FAC SCI & TECH MULHOUSE,PHYS & SPECTROSCOPIE ELECTRON LAB,CNRS,URA 1435,4 RUE FRERES LUMIERE,F-68093 MULHOUSE,FRANCE
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1994年 / 12卷 / 04期
关键词
D O I
10.1116/1.587234
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The thermal reactivity of NH3 with Si(001), Ge(001), Si1-xGex(001), and thinly Ge-covered Si(001) or Si-covered Ge(001) surfaces has been studied by means of in situ x-ray photoelectron spectroscopy in a temperature domain (T approximately 600-degrees-C) compatible with the usual growth of Ge-Si based heterostructures. A very marked difference between Si(001) and Ge(001) initial sticking coefficients is found, the latter surface being totally inert against nitridation by NH3 in contrast with the Si(001) surface. This nitridation selectivity provides easy access to information about surface termination in different situations where Si and Ge are potentially mixed, the reactivity depending on whether Si appears at the reactive interface or not. As a test, comparing the nitrogen uptake curves in the early stages of NH3 exposure, for all the studied structures except Si(001), a Ge-like initial sticking coefficient or a non-nitriding behavior is found. This is fairly explained on the basis of the well-known concepts of the Stranski-Krastanov growth mode for the Ge/Si system and by Ge surface segregation for the Si1-xGex and Si/Ge systems. Our result also implies the need of plasma-assisted treatments in order to achieve simultaneous Si and Ge nitridation of SiGe alloys.
引用
收藏
页码:2699 / 2704
页数:6
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