ULTRAVIOLET OZONE-INDUCED OXIDATION OF EPITAXIAL SI1-XGEX(111)

被引：30

作者：

AGARWAL, A

PATTERSON, JK

GREENE, JE

ROCKETT, A

机构：

[1] UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801

[2] UNIV ILLINOIS,DEPT MAT SCI,URBANA,IL 61801

来源：

APPLIED PHYSICS LETTERS | 1993年 / 63卷 / 04期

关键词：

D O I：

10.1063/1.109991

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Exposure of Si1-xGex(111) to ultraviolet light in air at room temperature is shown, using angle-resolved x-ray photoelectron spectroscopy and preferential etching, to lead to the formation of a two-phase oxide consisting of SiO2 and GeO2. Segregation of Ge was not observed at either the alloy/oxide or oxide/vapor interface. The oxidation rate was found to increase with increasing Ge content in the alloy.

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页码：518 / 520

页数：3

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