BORON-DIFFUSION FROM A REACTIVELY SPUTTERED GLASS SOURCE IN SI AND SIO2

被引：10

作者：

BAGRATISHVILI, GD

DZHANELIDZE, RB

JISHIASHVILI, DA

PISKANOVSKII, LV

SHIOLASHVILI, ZN

机构：

[1] Institute of Cybernetics, Academy of Sciences of the Georgian SSR

来源：

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 1979年 / 56卷 / 01期

关键词：

D O I：

10.1002/pssa.2210560103

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The reactive plasma sputtering technique is used to obtain a boron diffusion source in the form of borosilicate glass (BSG). Physlcal and chemical properties of the BSG films are investigated. Diffusion parameters of B in Si and SiO, are obtaincd in the temperature range between 950 and 1200 °C. Copyright © 1979 WILEY‐VCH Verlag GmbH & Co. KGaA

引用

页码：27 / 35

页数：9

共 14 条

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