THERMALLY AND LIGHT-INDUCED INSTABILITIES IN PHOSPHORUS-DOPED HYDROGENATED AMORPHOUS-SILICON

被引：7

作者：

BANERJEE, R ^{[1
]}

FURUI, T ^{[1
]}

OKUSHI, H ^{[1
]}

TANAKA, K ^{[1
]}

机构：

[1] ELECTROTECH LAB,TSUKUBA,IBARAKI 305,JAPAN

来源：

APPLIED PHYSICS LETTERS | 1988年 / 53卷 / 19期

关键词：

D O I：

10.1063/1.100389

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1829 / 1831

页数：3

共 17 条

[1] LIGHT-INDUCED DANGLING BONDS IN HYDROGENATED AMORPHOUS-SILICON [J].

DERSCH, H ;

STUKE, J ;

BEICHLER, J .

APPLIED PHYSICS LETTERS, 1981, 38 (06) :456-458

[2] P-RELATED DEFECTS IN P-DOPED ALPHA-SI-H [J].

ISHII, N ;

KUMEDA, M ;

SHIMIZU, T .

SOLID STATE COMMUNICATIONS, 1985, 53 (06) :543-546

[3]

KAKOLIOS J, 1987, AIP C P, V157, P179

[4] PHOTOINDUCED TRANSIENT LOCALIZED STATES IN A-SI-H [J].

OKUSHI, H ;

ASANO, A ;

MIYAKAWA, M ;

YAMASAKI, S ;

TANAKA, K .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 1983, 59-6 (DEC) :393-396

[5] DETERMINATION OF THE DENSITY OF STATE DISTRIBUTION OF A-SI-H BY ISOTHERMAL CAPACITANCE TRANSIENT SPECTROSCOPY [J].

OKUSHI, H ;

TOKUMARU, Y ;

YAMASAKI, S ;

OHEDA, H ;

TANAKA, K .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (07) :L549-L552

[6] REVERSIBLE PHOTOINDUCED MODIFICATION OF ELECTRON-CAPTURE CROSS-SECTION AT LOCALIZED STATES IN A-SI-H [J].

OKUSHI, H ;

MIYAGAWA, M ;

TOKUMARU, Y ;

YAMASAKI, S ;

OHEDA, H ;

TANAKA, K .

APPLIED PHYSICS LETTERS, 1983, 42 (10) :895-897

[7]

OKUSHI H, 1984, AIP C P, V120, P250

[8]

OKUSHI H, UNPUB

[9] INTRINSIC DANGLING-BOND DENSITY IN HYDROGENATED AMORPHOUS-SILICON [J].

SMITH, ZE ;

WAGNER, S .

PHYSICAL REVIEW B, 1985, 32 (08) :5510-5513

[10]

SMITH ZE, 1987, PHYS REV LETT, V35, P1316

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