THE EFFECT OF LASER ANNEALING ON LASER-INDUCED DAMAGE THRESHOLD

被引：13

作者：

KERR, NC

EMMONY, DC

机构：

[1] Loughborough University of Technology, Department of Physics, Loughborough, Leicestershire

来源：

JOURNAL OF MODERN OPTICS | 1990年 / 37卷 / 04期

关键词：

D O I：

10.1080/09500349014550851

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

A significant enhancement of the single-shot laser-induced damage threshold of CaF2 and fused silica and a moderate enhancement for GaAs and Al has been observed as the result of laser annealing using an excimer laser operating at 248 nm. This phenomenon is primarily attributed to a reduction of the residual surface roughness of the samples. © 1990 Taylor & Francis Ltd.

引用

页码：787 / 802

页数：16

共 16 条

[11] THE DESIGN AND PERFORMANCE OF PLANAR MAGNETRON SPUTTERING CATHODES [J].