ON SOME LESS EVIDENT ASPECTS OF LASER ANNEALING

被引：12

作者：

VITALI, G ^{[1
]}

机构：

[1] CNR,NAZL STRUTTURA MAT GRP,ROME,ITALY

来源：

PHYSICS LETTERS A | 1980年 / 78卷 / 04期

关键词：

D O I：

10.1016/0375-9601(80)90403-X

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：387 / 390

页数：4

共 14 条

[1] MELTING MODEL FOR PULSING-LASER ANNEALING OF IMPLANTED SEMICONDUCTORS [J].

BAERI, P ;

CAMPISANO, SU ;

FOTI, G ;

RIMINI, E .

JOURNAL OF APPLIED PHYSICS, 1979, 50 (02) :788-797

[2] STRUCTURE TRANSITIONS IN AMORPHOUS SILICON UNDER LASER IRRADIATION [J].

BERTOLOTTI, M ;

VITALI, G ;

RIMINI, E ;

FOTI, G .

JOURNAL OF APPLIED PHYSICS, 1979, 50 (01) :259-265

[3]

BERTOLOTTI M, 1979, NOV INT C LAS EL BEA

[4] AMORPHOUS-POLYCRYSTAL TRANSITION INDUCED BY LASER-PULSE IN SELF-ION IMPLANTED SILICON [J].

FOTI, G ;

RIMINI, E ;

VITALI, G ;

BERTOLOTTI, M .

APPLIED PHYSICS, 1977, 14 (02) :189-191

[5]

GAT G, 1978, APPL PHYS LETT, V32, P276

[6]

KACHURIN GA, 1976, SOV PHYS SEMICOND+, V10, P1128

[7]

KLIMENKO AG, 1976, SOV J QUANTUM ELECTR, V5, P1289

[8]

MULVEY T, 1974, MODERN PHYSICAL TECH, P51

[9]

REGOLINI JL, 1979, LASER SOLID INTERACT, P393

[10] GRAIN-SIZE DEPENDENCE IN A SELF-IMPLANTED SILICON LAYER ON LASER IRRADIATION ENERGY DENSITY [J].

TSENG, WF ;

MAYER, JW ;

CAMPISANO, SU ;

FOTI, G ;

RIMINI, E .

APPLIED PHYSICS LETTERS, 1978, 32 (12) :824-826

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