SEMICONDUCTOR-DEVICES FOR WT4 REPEATER

[1] AXELING GS, COMMUNICATION

[2] PLANAR ISOLATED GAAS DEVICES PRODUCED BY MOLECULAR-BEAM EPITAXY [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1976, 23 (04) : 481 - 484

[3] REGENERATIVE REPEATERS [J]. BELL SYSTEM TECHNICAL JOURNAL, 1977, 56 (10): : 2055 - 2075

[4] OPTIMIZATION OF DIODE STRUCTURES FOR MONOLITHIC INTEGRATED MICROWAVE CIRCUITS [J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1968, SC 3 (02) : 107 - +

[5] BOSCH F, 1977, JUN IEEE MTTS INT MI

[6] CHO AY, 1975, J APPL PHYS, V46

[7] CLEMETSO.WJ, 1971, AT&T TECH J, V50, P2917

[8] CURBY RC, 1976, FEB IEEE INT SOL STA

[9] DUNN CN, 1973, IEDM DIGEST DEC, P486

[10] SILICON EPITAXIAL WAFER WITH ABRUPT INTERFACE BY 2-STEP EPITAXIAL-GROWTH TECHNIQUE [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (11) : 1523 - 1531

[1] AXELING GS, COMMUNICATION

[2] PLANAR ISOLATED GAAS DEVICES PRODUCED BY MOLECULAR-BEAM EPITAXY [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1976, 23 (04) : 481 - 484

[3] REGENERATIVE REPEATERS [J]. BELL SYSTEM TECHNICAL JOURNAL, 1977, 56 (10): : 2055 - 2075

[4] OPTIMIZATION OF DIODE STRUCTURES FOR MONOLITHIC INTEGRATED MICROWAVE CIRCUITS [J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1968, SC 3 (02) : 107 - +

[5] BOSCH F, 1977, JUN IEEE MTTS INT MI

[6] CHO AY, 1975, J APPL PHYS, V46

[7] CLEMETSO.WJ, 1971, AT&T TECH J, V50, P2917

[8] CURBY RC, 1976, FEB IEEE INT SOL STA

[9] DUNN CN, 1973, IEDM DIGEST DEC, P486

[10] SILICON EPITAXIAL WAFER WITH ABRUPT INTERFACE BY 2-STEP EPITAXIAL-GROWTH TECHNIQUE [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (11) : 1523 - 1531