EFFECT OF THE DRAIN-SOURCE VOLTAGE ON DOPANT PROFILES OBTAINED FROM THE DC MOSFET PROFILE METHOD

被引：7

作者：

BUEHLER, MG

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1980年 / 27卷 / 12期

关键词：

D O I：

10.1109/T-ED.1980.20264

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：2273 / 2277

页数：5

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