MIGRATION OF GOLD ATOMS THROUGH THIN SILICON-OXIDE FILMS

被引：9

作者：

MADAMS, CJ ^{[1
]}

MORGAN, DV ^{[1
]}

HOWES, MJ ^{[1
]}

机构：

[1] UNIV LEEDS,DEPT ELECT & ELECTR ENGN,LEEDS LS2 9JT,ENGLAND

来源：

JOURNAL OF APPLIED PHYSICS | 1974年 / 45卷 / 11期

关键词：

D O I：

10.1063/1.1663192

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：5088 / 5090

页数：3

共 16 条

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[3] STRUCTURE OF SILICON OXIDE FILMS [J].

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[4]

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[5]

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[6] MEMORY SWITCHING IN SIO FILMS WITH AG AND CO ELECTRODES [J].

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JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1973, 6 (01) :82-86

[7]

MORGAN DV, 1973, THIN SOLID FILMS, V15, P127

[8]

MORGAN DV, 1974, THIN SOLID FILMS, V20, P57

[9] MICROANALYSIS OF MATERIALS BY BACKSCATTERING SPECTROMETRY [J].

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SCIENCE, 1972, 177 (4052) :841-&

[10]

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