PROPERTIES OF SILICON-NITRIDE FILMS PRODUCED BY RF PLASMA-ACTIVATED CHEMICAL VAPOR-DEPOSITION

[1] ALEXANDER JM, THIN FILM DIELECTRIC, P186

[2] PREPARATION AND PROPERTIES OF AMORPHOUS SILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1969, 116 (01) : 77 - &

[3] RATES OF REACTION OF HYDROGEN-ATOMS WITH SILANE AND GERMANE [J]. JOURNAL OF PHYSICAL CHEMISTRY, 1975, 79 (17) : 1752 - 1758

[4] PROPERTIES OF AMMONIA-FREE NITROGEN-SI3N4 FILMS PRODUCED AT LOW-TEMPERATURES [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1972, 119 (09) : 1248 - &

[5] Kirk R. W., 1974, Techniques and applications of plasma chemistry, P347

[6] KOCIAN P, 1973, IUPAC INT S PLASMA C

[7] CODEPOSITION OF GLASSY SILICA AND GERMANIA INSIDE A TUBE BY PLASMA-ACTIVATED CVD [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (07) : 1079 - 1083

[8] MOUTONNET D, 1974, THESIS AIX MARSEILLE

[9] ROSLER RS, 1976, SOLID STATE TECH JUN, P45

[10] Shitova E. V., 1975, Inorganic Materials, V11, P691

[1] ALEXANDER JM, THIN FILM DIELECTRIC, P186

[2] PREPARATION AND PROPERTIES OF AMORPHOUS SILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1969, 116 (01) : 77 - &

[3] RATES OF REACTION OF HYDROGEN-ATOMS WITH SILANE AND GERMANE [J]. JOURNAL OF PHYSICAL CHEMISTRY, 1975, 79 (17) : 1752 - 1758

[4] PROPERTIES OF AMMONIA-FREE NITROGEN-SI3N4 FILMS PRODUCED AT LOW-TEMPERATURES [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1972, 119 (09) : 1248 - &

[5] Kirk R. W., 1974, Techniques and applications of plasma chemistry, P347

[6] KOCIAN P, 1973, IUPAC INT S PLASMA C

[7] CODEPOSITION OF GLASSY SILICA AND GERMANIA INSIDE A TUBE BY PLASMA-ACTIVATED CVD [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (07) : 1079 - 1083

[8] MOUTONNET D, 1974, THESIS AIX MARSEILLE

[9] ROSLER RS, 1976, SOLID STATE TECH JUN, P45

[10] Shitova E. V., 1975, Inorganic Materials, V11, P691