BOUND-EXCITON LUMINESCENCE FROM HIGHLY DOPED SILICON

[1] DONOR EXCITON SATELLITES IN CUBIC SILICON-CARBIDE - MULTIPLE BOUND EXCITONS REVISITED [J]. PHYSICAL REVIEW LETTERS, 1976, 37 (24) : 1635 - 1638

[2] NEW RADIATIVE RECOMBINATION PROCESSES INVOLVING NEUTRAL DONORS AND ACCEPTORS IN SILICON AND GERMANIUM [J]. PHYSICAL REVIEW, 1967, 161 (03): : 711 - &

[3] NEW MODEL FOR BOUND MULTI-EXCITON COMPLEXES [J]. SOLID STATE COMMUNICATIONS, 1977, 21 (08) : 713 - 715

[4] NEW PHOTOLUMINESCENCE LINE-SERIES SPECTRA ATTRIBUTED TO DECAY OF MULTIEXCITON COMPLEXES BOUND TO LI, B, AND P CENTERS IN SI [J]. PHYSICAL REVIEW B, 1974, 9 (02): : 723 - 726

[5] MORGAN TN, 1976, P INT C PHYS SEMICON, P825

[6] BOUND MULTIPLE-EXCITON COMPLEXES IN SILICON AT HIGH DOPING LEVELS [J]. SOLID STATE COMMUNICATIONS, 1974, 14 (06) : 481 - 483

[7] MAGNETIC-FIELD AND STRESS-INDUCED SPLITTING OF NOVEL SHARP EMISSION-LINE SERIES IN SILICON ASSOCIATED WITH P, LI, OR B - NO BOUND MULTIPLE-EXCITON COMPLEXES [J]. PHYSICAL REVIEW LETTERS, 1976, 36 (01) : 48 - 51

[8] EVIDENCE FOR BOUND MULTIPLE-EXCITON COMPLEXES IN SILICON [J]. PHYSICAL REVIEW LETTERS, 1973, 31 (06) : 376 - 379

[1] DONOR EXCITON SATELLITES IN CUBIC SILICON-CARBIDE - MULTIPLE BOUND EXCITONS REVISITED [J]. PHYSICAL REVIEW LETTERS, 1976, 37 (24) : 1635 - 1638

[2] NEW RADIATIVE RECOMBINATION PROCESSES INVOLVING NEUTRAL DONORS AND ACCEPTORS IN SILICON AND GERMANIUM [J]. PHYSICAL REVIEW, 1967, 161 (03): : 711 - &

[3] NEW MODEL FOR BOUND MULTI-EXCITON COMPLEXES [J]. SOLID STATE COMMUNICATIONS, 1977, 21 (08) : 713 - 715

[4] NEW PHOTOLUMINESCENCE LINE-SERIES SPECTRA ATTRIBUTED TO DECAY OF MULTIEXCITON COMPLEXES BOUND TO LI, B, AND P CENTERS IN SI [J]. PHYSICAL REVIEW B, 1974, 9 (02): : 723 - 726

[5] MORGAN TN, 1976, P INT C PHYS SEMICON, P825

[6] BOUND MULTIPLE-EXCITON COMPLEXES IN SILICON AT HIGH DOPING LEVELS [J]. SOLID STATE COMMUNICATIONS, 1974, 14 (06) : 481 - 483

[7] MAGNETIC-FIELD AND STRESS-INDUCED SPLITTING OF NOVEL SHARP EMISSION-LINE SERIES IN SILICON ASSOCIATED WITH P, LI, OR B - NO BOUND MULTIPLE-EXCITON COMPLEXES [J]. PHYSICAL REVIEW LETTERS, 1976, 36 (01) : 48 - 51

[8] EVIDENCE FOR BOUND MULTIPLE-EXCITON COMPLEXES IN SILICON [J]. PHYSICAL REVIEW LETTERS, 1973, 31 (06) : 376 - 379