SOME ASPECTS OF AUGER MICROANALYSIS

被引:65
作者
VANOOSTROM, A
机构
[1] Philips Research Laboratories, Eindhoven
关键词
D O I
10.1016/0039-6028(79)90643-5
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The physical basis of high resolution Auger microanalysis is described. The small electron beam sizes needed (∼ 100 nm) are obtained by using high brightness electron guns at relatively high voltages. The influence of primary beam energy on cross-section, backscattering factor and resolution is examined. Other electron beam induced processes at the surface as dissociation and desorption are also considered. An analysis is made of the limitations for a quantitative Auger microanalysis. Two examples are given illustrating in-depth profiling at high lateral resolution and crater edge profiling. © 1979.
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页码:615 / 634
页数:20
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