ION RESPONSE TO PLASMA EXCITATION-FREQUENCY

[1] BRUCE RH, 1981, OCT EL SOC M DENV, P631

[2] BRUCE RH, 1980, 2ND P INT S DRY PROC, P131

[3] BRUCE RH, 1981, PLASMA PROCESSING, P243

[4] POSITIVE-ION BOMBARDMENT OF SUBSTRATES IN RF DIODE GLOW-DISCHARGE SPUTTERING [J]. JOURNAL OF APPLIED PHYSICS, 1972, 43 (12) : 4965 - 4971

[5] ION-ASSISTED AND ELECTRON-ASSISTED GAS-SURFACE CHEMISTRY - IMPORTANT EFFECT IN PLASMA-ETCHING [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (05) : 3189 - 3196

[6] STARTING POTENTIALS OF ELECTRODELESS DISCHARGES [J]. PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1949, 197 (1048): : 107 - 124

[7] PARRY PD, 1970, SOLID STATE TECHNOL, V22, P125

[8] REACTIVE ION ETCHING OF SILICON [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (02): : 410 - 413

[9] SMITH DL, 1981, OCT EL SOC M DENV, P625

[1] BRUCE RH, 1981, OCT EL SOC M DENV, P631

[2] BRUCE RH, 1980, 2ND P INT S DRY PROC, P131

[3] BRUCE RH, 1981, PLASMA PROCESSING, P243

[4] POSITIVE-ION BOMBARDMENT OF SUBSTRATES IN RF DIODE GLOW-DISCHARGE SPUTTERING [J]. JOURNAL OF APPLIED PHYSICS, 1972, 43 (12) : 4965 - 4971

[5] ION-ASSISTED AND ELECTRON-ASSISTED GAS-SURFACE CHEMISTRY - IMPORTANT EFFECT IN PLASMA-ETCHING [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (05) : 3189 - 3196

[6] STARTING POTENTIALS OF ELECTRODELESS DISCHARGES [J]. PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1949, 197 (1048): : 107 - 124

[7] PARRY PD, 1970, SOLID STATE TECHNOL, V22, P125

[8] REACTIVE ION ETCHING OF SILICON [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (02): : 410 - 413

[9] SMITH DL, 1981, OCT EL SOC M DENV, P625