UNIFICATION OF THE PROPERTIES OF THE EL2 DEFECT IN GAAS

[1] BISTABILITY AND METASTABILITY OF THE GALLIUM VACANCY IN GAAS - THE ACTUATOR OF EL2 [J]. PHYSICAL REVIEW LETTERS, 1985, 55 (21) : 2340 - 2343

[2] BARAFF GA, 1908, MATER RES SOC S P, V104, P375

[3] METASTABILITY OF THE ISOLATED ARSENIC-ANTISITE DEFECT IN GAAS [J]. PHYSICAL REVIEW LETTERS, 1988, 60 (21) : 2187 - 2190

[4] THEORETICAL EVIDENCE FOR AN OPTICALLY INDUCIBLE STRUCTURAL TRANSITION OF THE ISOLATED AS ANTISITE IN GAAS - IDENTIFICATION AND EXPLANATION OF EL2 [J]. PHYSICAL REVIEW LETTERS, 1988, 60 (21) : 2183 - 2186

[5] METASTABLE STATE OF EL2 IN GAAS [J]. PHYSICAL REVIEW LETTERS, 1987, 59 (25) : 2875 - 2878

[6] Gatos H. C., 1985, MATER RES SOC S P, V46, P153

[7] IDENTIFICATION OF THE 0.82-EV ELECTRON TRAP, EL2 IN GAAS, AS AN ISOLATED ANTISITE ARSENIC DEFECT [J]. PHYSICAL REVIEW LETTERS, 1985, 55 (20) : 2204 - 2207

[8] KERGMANN K, 1988, 5TH P C SEM 3 5 MAT, P397

[9] INVERTED THERMAL-CONVERSION - GAAS, A NEW ALTERNATIVE MATERIAL FOR INTEGRATED-CIRCUITS [J]. APPLIED PHYSICS LETTERS, 1986, 49 (14) : 892 - 894

[10] MARTIN GM, 1986, DEEP CTR SEMICONDUCT, P399

[1] BISTABILITY AND METASTABILITY OF THE GALLIUM VACANCY IN GAAS - THE ACTUATOR OF EL2 [J]. PHYSICAL REVIEW LETTERS, 1985, 55 (21) : 2340 - 2343

[2] BARAFF GA, 1908, MATER RES SOC S P, V104, P375

[3] METASTABILITY OF THE ISOLATED ARSENIC-ANTISITE DEFECT IN GAAS [J]. PHYSICAL REVIEW LETTERS, 1988, 60 (21) : 2187 - 2190

[4] THEORETICAL EVIDENCE FOR AN OPTICALLY INDUCIBLE STRUCTURAL TRANSITION OF THE ISOLATED AS ANTISITE IN GAAS - IDENTIFICATION AND EXPLANATION OF EL2 [J]. PHYSICAL REVIEW LETTERS, 1988, 60 (21) : 2183 - 2186

[5] METASTABLE STATE OF EL2 IN GAAS [J]. PHYSICAL REVIEW LETTERS, 1987, 59 (25) : 2875 - 2878

[6] Gatos H. C., 1985, MATER RES SOC S P, V46, P153

[7] IDENTIFICATION OF THE 0.82-EV ELECTRON TRAP, EL2 IN GAAS, AS AN ISOLATED ANTISITE ARSENIC DEFECT [J]. PHYSICAL REVIEW LETTERS, 1985, 55 (20) : 2204 - 2207

[8] KERGMANN K, 1988, 5TH P C SEM 3 5 MAT, P397

[9] INVERTED THERMAL-CONVERSION - GAAS, A NEW ALTERNATIVE MATERIAL FOR INTEGRATED-CIRCUITS [J]. APPLIED PHYSICS LETTERS, 1986, 49 (14) : 892 - 894

[10] MARTIN GM, 1986, DEEP CTR SEMICONDUCT, P399