HYDROGEN INCORPORATION BEHAVIOR AND RADIATION-DAMAGE IN PROTON BOMBARDED INP SINGLE-CRYSTALS

被引：9

作者：

ASCHERON, C

RIEDE, V

SOBOTTA, H

NEUMANN, H

机构：

来源：

RADIATION EFFECTS AND DEFECTS IN SOLIDS | 1990年 / 115卷 / 1-3期

关键词：

INP; HYDROGEN IMPLANTATION; RADIATION DAMAGE; INFRARED ABSORPTION; ANNEALING; HYDROGEN BONDING;

D O I：

10.1080/10420159008220563

中图分类号：

TL [原子能技术]; O571 [原子核物理学];

学科分类号：

0827 ; 082701 ;

摘要：

In proton bombarded InP single crystals the incorporation behaviour of different hydrogen isotopes is studied in relation to implantation induced radiation defects. Investigations of the fluence dependence (D= 1016-1018cm-2), of the depth profile and of the annealing behaviour (Tan= 300–1000 K) of hydrogen incorporation and of damage density indicate that only a small fraction of the implanted hydrogen is chemically bonded to host lattice atoms. These bonded hydrogen atoms saturate dangling bonds at defect sites. © 1990, Taylor & Francis Group, LLC. All rights reserved.

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页码：145 / 155

页数：11

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