GROWTH MODES OF GE ON GAAS(001)

被引：10

作者：

FALTA, J ^{[1
]}

REUTER, MC ^{[1
]}

TROMP, RM ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

APPLIED PHYSICS LETTERS | 1994年 / 65卷 / 13期

关键词：

D O I：

10.1063/1.112884

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have used low-energy electron microscopy to investigate the growth of Ge on GaAs(001)-c(2X8). Depending on the growth temperature we find a wide variety of growth modes: At 420 degrees C growth proceeds layer by layer, with nucleation of two-dimensional (2D) islands smaller than 150 Angstrom across. An increase of growth temperature to 450-480 degrees C enhances surface diffusion and results in formation of large anisotropic 2D islands on wide terraces along with denuded zones-and step flow-along the step edges. Further temperature increase transforms the growth mode to step flow. At 540 degrees C the growth mode becomes unstable, resulting in a roughening of the Ge surface.

引用

收藏

页码：1680 / 1682

页数：3

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