DETECTION SENSITIVITY OF HEAVY IMPURITIES IN SI USING 280 KEV HE2+ AND C2+ BACKSCATTERING

被引:14
作者
HART, RR [1 ]
DUNLAP, HL [1 ]
MOHR, AJ [1 ]
MARSH, OJ [1 ]
机构
[1] HUGHES RES LABS,MALIBU,CA 90265
关键词
D O I
10.1016/0040-6090(73)90030-8
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:137 / 144
页数:8
相关论文
共 6 条
  • [1] ABEL F, 1972, P INT C MODERN TREND
  • [2] Eisen F.H., 1972, RADIAT EFF, V13, P93, DOI [10.1080/00337577208231165, DOI 10.1080/00337577208231165]
  • [3] ERIKSSON L, 1969, RADIAT EFF, V1, P71
  • [4] CHANNELING MEASUREMENTS IN AS-DOPED SI
    HASKELL, J
    RIMINI, E
    MAYER, JW
    [J]. JOURNAL OF APPLIED PHYSICS, 1972, 43 (08) : 3425 - &
  • [5] Mayer J. W., 1970, ION IMPLANTATION SEM
  • [6] DETERMINATION OF SURFACE CONTAMINATION ON SILICON BY LARGE ANGLE ION SCATTERING
    THOMPSON, DA
    BARBER, HD
    MACKINTOSH, WD
    [J]. APPLIED PHYSICS LETTERS, 1969, 14 (03) : 102 - +