THE NATURE AND FORMATION MECHANISM OF ANOMALOUS DEFECTS IN DISLOCATION FREE FZ-SILICON CRYSTALS CAUSED BY HYDROGEN DOPING

被引：9

作者：

WOLF, E

机构：

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1982年 / 70卷 / 01期

关键词：

D O I：

10.1002/pssa.2210700155

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：K59 / K61

页数：3

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