EFFECT OF LOW COOLING RATES ON SWIRLS AND STRIATIONS IN DISLOCATION-FREE SILICON-CRYSTALS

被引：34

作者：

ROKSNOER, PJ ^{[1
]}

BARTELS, WJ ^{[1
]}

BULLE, CWT ^{[1
]}

机构：

[1] PHILIPS RES LABS,EINDHOVEN,NETHERLANDS

来源：

JOURNAL OF CRYSTAL GROWTH | 1976年 / 35卷 / 02期

关键词：

D O I：

10.1016/0022-0248(76)90179-2

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：245 / 248

页数：4

共 16 条

[1] INFLUENCE OF ANNEALING ON RESISTIVITY PROFILE OF SILICON MONOCRYSTALS [J].

DANNHAUSER, F ;

KRAUSSE, J ;

MAYER, K .

SOLID-STATE ELECTRONICS, 1972, 15 (12) :1383-+

[2] GROWTH OF SILICON CRYSTALS FREE FROM DISLOCATIONS [J].

DASH, WC .

JOURNAL OF APPLIED PHYSICS, 1959, 30 (04) :459-474

[3] FORMATION AND NATURE OF SWIRL DEFECTS IN SILICON [J].

FOLL, H ;

KOLBESEN, BO .

APPLIED PHYSICS, 1975, 8 (04) :319-331

[4] NATURE OF SWIRLS AND ITS SIGNIFICANCE FOR UNDERSTANDING POINT-DEFECTS IN SILICON [J].

FOLL, H ;

KOLBESEN, BO ;

FRANK, W .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1975, 29 (01) :K83-K87

[5]

KOCK AJR, 1975, J CRYST GROWTH, V30, P279

[6]

KOCK AJR, 1973, SEMICONDUCTOR SILICO, P83

[7]

KOCK AJR, 1973, PHILIPS RES REPT S1

[8] FORMATION AND ELIMINATION OF GROWTH STRIATIONS IN DISLOCATION-FREE SILICON-CRYSTALS [J].

KOCK, AJRD ;

ROKSNOER, PJ ;

BOONEN, PGT .

JOURNAL OF CRYSTAL GROWTH, 1975, 28 (01) :125-137

[9]

KOCK AJRD, 1973, J APPL PHYS, V44, P2816

[10]

KOCK AJRD, 1971, J ELECTROCHEM SOC, V118, P1851

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