INFLUENCE OF ANNEALING ON RESISTIVITY PROFILE OF SILICON MONOCRYSTALS

[1] Ciszek T. F., 1969, Semiconductor silicon, P156

[2] LIQUID-SOLID INTERFACE SHAPE OBSERVED IN SILICON CRYSTALS GROWN BY THE CZOCHRALSKI METHOD [J]. CANADIAN JOURNAL OF PHYSICS, 1960, 38 (03) : 439 - 443

[3] BULK DIFFUSION OF PHOSPHORUS IN SILICON IN HYDROGEN ATMOSPHERE [J]. APPLIED PHYSICS LETTERS, 1970, 17 (04) : 137 - &

[4] AVALANCHE EFFECTS IN SILICON P-N JUNCTIONS .2. STRUCTURALLY PERFECT JUNCTIONS [J]. JOURNAL OF APPLIED PHYSICS, 1963, 34 (06) : 1591 - +

[5] A NEW STRIATION ETCH FOR SILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1970, 117 (02) : 261 - &

[6] Kendall D. L., 1969, Semiconductor silicon, P358

[7] KRAUSSE J, 1970, 2 DFG K BURGH

[8] RESISTIVITY INHOMOGENEITIES IN SILICON CRYSTALS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1967, 114 (03) : 255 - &

[9] MUHLBAUER A, 1965, Z NATURFORSCH PT A, VA 20, P1089

[10] SIGMUND H, UNPUBLISHED

[1] Ciszek T. F., 1969, Semiconductor silicon, P156

[2] LIQUID-SOLID INTERFACE SHAPE OBSERVED IN SILICON CRYSTALS GROWN BY THE CZOCHRALSKI METHOD [J]. CANADIAN JOURNAL OF PHYSICS, 1960, 38 (03) : 439 - 443

[3] BULK DIFFUSION OF PHOSPHORUS IN SILICON IN HYDROGEN ATMOSPHERE [J]. APPLIED PHYSICS LETTERS, 1970, 17 (04) : 137 - &

[4] AVALANCHE EFFECTS IN SILICON P-N JUNCTIONS .2. STRUCTURALLY PERFECT JUNCTIONS [J]. JOURNAL OF APPLIED PHYSICS, 1963, 34 (06) : 1591 - +

[5] A NEW STRIATION ETCH FOR SILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1970, 117 (02) : 261 - &

[6] Kendall D. L., 1969, Semiconductor silicon, P358

[7] KRAUSSE J, 1970, 2 DFG K BURGH

[8] RESISTIVITY INHOMOGENEITIES IN SILICON CRYSTALS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1967, 114 (03) : 255 - &

[9] MUHLBAUER A, 1965, Z NATURFORSCH PT A, VA 20, P1089

[10] SIGMUND H, UNPUBLISHED