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THE NATURE OF A 2050-2150-CM-1 INFRARED BAND IN NEUTRON-TRANSMUTATION-DOPED SILICON GROWN BY THE FLOATING-ZONE METHOD IN A HYDROGEN ATMOSPHERE
被引:15
作者
:
MENG, XT
论文数:
0
引用数:
0
h-index:
0
机构:
BEIJING UNIV,DEPT PHYS,BEIJING,PEOPLES R CHINA
BEIJING UNIV,DEPT PHYS,BEIJING,PEOPLES R CHINA
MENG, XT
[
1
]
QIN, GG
论文数:
0
引用数:
0
h-index:
0
机构:
BEIJING UNIV,DEPT PHYS,BEIJING,PEOPLES R CHINA
BEIJING UNIV,DEPT PHYS,BEIJING,PEOPLES R CHINA
QIN, GG
[
1
]
DU, YC
论文数:
0
引用数:
0
h-index:
0
机构:
BEIJING UNIV,DEPT PHYS,BEIJING,PEOPLES R CHINA
BEIJING UNIV,DEPT PHYS,BEIJING,PEOPLES R CHINA
DU, YC
[
1
]
ZHANG, YF
论文数:
0
引用数:
0
h-index:
0
机构:
BEIJING UNIV,DEPT PHYS,BEIJING,PEOPLES R CHINA
BEIJING UNIV,DEPT PHYS,BEIJING,PEOPLES R CHINA
ZHANG, YF
[
1
]
机构
:
[1]
BEIJING UNIV,DEPT PHYS,BEIJING,PEOPLES R CHINA
来源
:
JOURNAL OF APPLIED PHYSICS
|
1988年
/ 63卷
/ 11期
关键词
:
D O I
:
10.1063/1.340342
中图分类号
:
O59 [应用物理学];
学科分类号
:
摘要
:
引用
收藏
页码:5606 / 5608
页数:3
相关论文
共 13 条
[11]
INVESTIGATION OF NEUTRON-IRRADIATION DAMAGE IN SILICON BY TRANSMISSION ELECTRON MICROSCOPY
[J].
PANKRATZ, JM
论文数:
0
引用数:
0
h-index:
0
PANKRATZ, JM
;
SPRAGUE, JA
论文数:
0
引用数:
0
h-index:
0
SPRAGUE, JA
;
RUDEE, ML
论文数:
0
引用数:
0
h-index:
0
RUDEE, ML
.
JOURNAL OF APPLIED PHYSICS,
1968,
39
(01)
:101
-&
[12]
BONDING AND THERMAL-STABILITY OF IMPLANTED HYDROGEN IN SILICON
[J].
STEIN, HJ
论文数:
0
引用数:
0
h-index:
0
机构:
SANDIA LABS,ALBUQUERQUE,NM 87115
SANDIA LABS,ALBUQUERQUE,NM 87115
STEIN, HJ
.
JOURNAL OF ELECTRONIC MATERIALS,
1975,
4
(01)
:159
-174
[13]
XU YC, 1985, NUCL TECHNOL, V8, P36
←
1
2
→
共 13 条
[11]
INVESTIGATION OF NEUTRON-IRRADIATION DAMAGE IN SILICON BY TRANSMISSION ELECTRON MICROSCOPY
[J].
PANKRATZ, JM
论文数:
0
引用数:
0
h-index:
0
PANKRATZ, JM
;
SPRAGUE, JA
论文数:
0
引用数:
0
h-index:
0
SPRAGUE, JA
;
RUDEE, ML
论文数:
0
引用数:
0
h-index:
0
RUDEE, ML
.
JOURNAL OF APPLIED PHYSICS,
1968,
39
(01)
:101
-&
[12]
BONDING AND THERMAL-STABILITY OF IMPLANTED HYDROGEN IN SILICON
[J].
STEIN, HJ
论文数:
0
引用数:
0
h-index:
0
机构:
SANDIA LABS,ALBUQUERQUE,NM 87115
SANDIA LABS,ALBUQUERQUE,NM 87115
STEIN, HJ
.
JOURNAL OF ELECTRONIC MATERIALS,
1975,
4
(01)
:159
-174
[13]
XU YC, 1985, NUCL TECHNOL, V8, P36
←
1
2
→