LOW-PRESSURE MOCVD GROWTH OF ZNTE AND OBSERVATION OF GAS REACTION

被引：14

作者：

NISHIO, M ^{[1
]}

OGAWA, H ^{[1
]}

YOSHIDA, A ^{[1
]}

机构：

[1] TOYOHASHI UNIV TECHNOL,TOYOHASHI,AICHI 440,JAPAN

来源：

VACUUM | 1990年 / 41卷 / 1-3期

关键词：

D O I：

10.1016/0042-207X(90)90460-G

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

ZnTe homoepitaxial layers have been grown as a function of the transport rate of source materials by metalorganic vapor phase deposition method. The growth rate increases sublinearly with increasing the transport rate of diethyltelluride (DETe), while it shows a maximum with the transport rate of dimethylzinc (DMZn). The surface of the layer grown on the (110) or (100) faces becomes smooth as the transport rate of DETe increases. From the quadrupole mass spectra, a dominant reaction product is CH4 at the high transport rate of DMZn, indicating that a large amount of methyl radicals is formed. The behavior of the growth rate is qualitatively explained with the Langmuir-Hinshelwood model, in which these radicals occupy the surface sites. © 1990 Pergamon Press plc.

引用

页码：715 / 717

页数：3

共 12 条

[1] THE GROWTH AND CHARACTERIZATION OF HGTE EPITAXIAL LAYERS MADE BY ORGANOMETALLIC EPITAXY [J].