INTERDIFFUSION MEASUREMENTS IN ASYMMETRICALLY STRAINED SIGE/SI SUPERLATTICES

被引：33

作者：

PROKES, SM ^{[1
]}

WANG, KL ^{[1
]}

机构：

[1] UNIV CALIF LOS ANGELES, DEPT ELECT ENGN, LOS ANGELES, CA 90024 USA

来源：

APPLIED PHYSICS LETTERS | 1990年 / 56卷 / 26期

关键词：

D O I：

10.1063/1.102858

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Interdiffusion measurements are reported for Si0.65Ge 0.35/Si asymmetrically strained superlattices grown by molecular beam epitaxy at 530°C. The temperature-dependent interdiffusion coefficient obtained from x-ray diffraction can be described by D=675 exp(-4.4 eV/kT)cm 2/s in the temperature range 700-880°C. Initially, an enhanced diffusion was observed, especially near the superlattice surface. This is attributed to the presence of nonequilibrium defects. Bulk interdiffusion measurements were made only after isoconfigurational conditions were attained. The diffusion analysis first formulated by J. W. Cahn [Acta Metall. 9, 795 (1961)] is applied here, and the relative importance of both gradient energy effects and coherency strain effects will be discussed.

引用

页码：2628 / 2630

页数：3

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