GROWTH OF GASB BY MOVPE - OPTIMIZATION OF ELECTRICAL QUALITY WITH RESPECT TO GROWTH-RATE, PRESSURE, TEMPERATURE AND III/V RATIO

被引：48

作者：

HAYWOOD, SK

MASON, NJ

WALKER, PJ

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1988年 / 93卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(88)90506-4

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

收藏

页码：56 / 61

页数：6

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