PHONON-ASSISTED RECOMBINATION IN A MULTIPLE-QUANTUM-WELL LPE INP-IN1-XGAXP1-ZASZ HETEROSTRUCTURE LASER

被引：12

作者：

REZEK, EA ^{[1
]}

CHIN, R ^{[1
]}

HOLONYAK, N ^{[1
]}

KIRCHOEFER, SW ^{[1
]}

KOLBAS, RM ^{[1
]}

机构：

[1] UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801

来源：

APPLIED PHYSICS LETTERS | 1979年 / 35卷 / 01期

关键词：

D O I：

10.1063/1.90924

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

By means of computer-controlled liquid-phase epitaxy, multiple-quantum-well InP-In1-xGaxP1-zAsz (x∼0.13, z∼0.29) heterostructures of uniform well (Lz∼160 Å) and coupling barrier size are grown and are examined in photoluminescence. Laser operation (77°K) of a six-well five-barrier undoped quaternary quantum-well heterostructure is identified an LO phonon energy (1×hω LO∼30 meV) below the lowest confined-particle transitions (No. 1 e→hh, E1) or at energy hω∼E1- hωLO.

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页码：45 / 47

页数：3

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共 9 条

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