INFLUENCE OF SPIN-DENSITY IN IMPLANTED SI LAYERS ON PULSED-LASER ANNEALING

In order to clarify an influence of the spin density or the optical absorption coefficient on the pulsed-laser annealing effect, we have performed systematically ion-backscattering and channeling analysis and ESR measurement as a funcion of spin densities in ion-implanted Si samples. It was found that the spin density can yield a good criterion for predicting the annealing effect because the spin density is strongly correlated with the optical absorption coefficient. From spin-density measurements, the initial absorption coefficient of the as-implanted Si layer was found to be a very important factor which dominates the effect of laser annealing even if there is a nonlinear absorption mechanism.