SELECTIVE ANNEALING OF ION-IMPLANTED AMORPHOUS LAYERS BY ND3+-YAG LASER IRRADIATION

[1] ANTONENKO AK, 1976, SOV PHYS SEMICOND+, V10, P81

[2] SPATIALLY CONTROLLED CRYSTAL REGROWTH OF ION-IMPLANTED SILICON BY LASER IRRADIATION [J]. APPLIED PHYSICS LETTERS, 1978, 32 (08) : 464 - 466

[3] ESR AND OPTICAL ABSORPTION STUDIES OF ION-IMPLANTED SILICON [J]. APPLIED PHYSICS LETTERS, 1970, 16 (05) : 205 - &

[4] PHYSICAL AND ELECTRICAL-PROPERTIES OF LASER-ANNEALED ION-IMPLANTED SILICON [J]. APPLIED PHYSICS LETTERS, 1978, 32 (05) : 276 - 278

[5] RESISTIVITY OF BULK SILICON AND OF DIFFUSED LAYERS IN SILICON [J]. BELL SYSTEM TECHNICAL JOURNAL, 1962, 41 (02): : 387 - +

[6] Lindhard J., 1963, VIDENSK SELSK MAT FY, V33, P1, DOI DOI 10.1002/ADMA.200904153

[7] CORRELATION BETWEEN LATTICE DAMAGE AND ELECTRICAL ACTIVATION OF PHOSPHORUS-IMPLANTED SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (04) : 2573 - 2575

[8] OPTICAL REFLECTIVITY STUDIES OF DAMAGE IN ION-IMPLANTED SILICON [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1978, 17 (05) : 955 - 956

[9] FORMATION OF AMORPHOUS SILICON BY ION-BOMBARDMENT AS A FUNCTION OF ION, TEMPERATURE, AND DOSE [J]. JOURNAL OF APPLIED PHYSICS, 1972, 43 (03) : 1112 - &

[10] LASER ANNEALING OF BORON-IMPLANTED SILICON [J]. APPLIED PHYSICS LETTERS, 1978, 32 (03) : 139 - 141

[1] ANTONENKO AK, 1976, SOV PHYS SEMICOND+, V10, P81

[2] SPATIALLY CONTROLLED CRYSTAL REGROWTH OF ION-IMPLANTED SILICON BY LASER IRRADIATION [J]. APPLIED PHYSICS LETTERS, 1978, 32 (08) : 464 - 466

[3] ESR AND OPTICAL ABSORPTION STUDIES OF ION-IMPLANTED SILICON [J]. APPLIED PHYSICS LETTERS, 1970, 16 (05) : 205 - &

[4] PHYSICAL AND ELECTRICAL-PROPERTIES OF LASER-ANNEALED ION-IMPLANTED SILICON [J]. APPLIED PHYSICS LETTERS, 1978, 32 (05) : 276 - 278

[5] RESISTIVITY OF BULK SILICON AND OF DIFFUSED LAYERS IN SILICON [J]. BELL SYSTEM TECHNICAL JOURNAL, 1962, 41 (02): : 387 - +

[6] Lindhard J., 1963, VIDENSK SELSK MAT FY, V33, P1, DOI DOI 10.1002/ADMA.200904153

[7] CORRELATION BETWEEN LATTICE DAMAGE AND ELECTRICAL ACTIVATION OF PHOSPHORUS-IMPLANTED SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (04) : 2573 - 2575

[8] OPTICAL REFLECTIVITY STUDIES OF DAMAGE IN ION-IMPLANTED SILICON [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1978, 17 (05) : 955 - 956

[9] FORMATION OF AMORPHOUS SILICON BY ION-BOMBARDMENT AS A FUNCTION OF ION, TEMPERATURE, AND DOSE [J]. JOURNAL OF APPLIED PHYSICS, 1972, 43 (03) : 1112 - &

[10] LASER ANNEALING OF BORON-IMPLANTED SILICON [J]. APPLIED PHYSICS LETTERS, 1978, 32 (03) : 139 - 141