INFLUENCE OF THE OXYGEN INCORPORATION ON THE STABILITY OF AL/TIN/SI STRUCTURES

被引：7

作者：

JIMENEZ, C ^{[1
]}

FERNANDEZ, M ^{[1
]}

ALBELLA, JM ^{[1
]}

MARTINEZDUART, JM ^{[1
]}

机构：

[1] UNIV AUTONOMA MADRID C-12,DEPT FIS APLICADA,E-28049 MADRID,SPAIN

来源：

APPLIED SURFACE SCIENCE | 1993年 / 70-1卷

关键词：

D O I：

10.1016/0169-4332(93)90564-R

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

TiN films have been deposited on Si substrates by reactive sputtering in order to study their barrier characteristics against aluminum-silicon interdiffusion. After Al metallization, annealing treatments at temperatures ranging from 350 to 450-degrees-C were carried out in an inert atmosphere. The samples were then characterized by AES and XPS techniques. Oxygen free TiN films show a loss of stability for temperatures close to 400-degrees-C. In order to improve the barrier behaviour of the TiN films, thermal treatments at 750-degrees-C in N2 were carried out on the films, previous to the Al deposition. This treatment leads to an improvement of the TiN/Si stability due to the incorporation of small amounts of oxygen in the samples. We have observed that Al/TiN/Si structures prepared under this conditions show a good barrier behaviour up to 450-degrees-C, as detected by the AES and XPS analysis.

引用

页码：475 / 478

页数：4

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