NITROGEN, OXYGEN, AND ARGON INCORPORATION DURING REACTIVE SPUTTER DEPOSITION OF TITANIUM NITRIDE

被引：46

作者：

WILLIAMS, DS ^{[1
]}

BAIOCCHI, FA ^{[1
]}

BEAIRSTO, RC ^{[1
]}

BROWN, JM ^{[1
]}

KNOELL, RV ^{[1
]}

MURARKA, SP ^{[1
]}

机构：

[1] RENSSELAER POLYTECH INST, DEPT MAT ENGN, TROY, NY 12180 USA

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1987年 / 5卷 / 06期

关键词：

D O I：

10.1116/1.583654

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1723 / 1729

页数：7

共 29 条

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[3]

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[10] INFLUENCE OF THE NITROGEN PARTIAL-PRESSURE ON THE PROPERTIES OF DC-SPUTTERED TITANIUM AND TITANIUM NITRIDE FILMS [J].

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