DEPOSITION OF TANTALUM TANTALUM OXIDE AND TANTALUM NITRIDE WITH CONTROLLED ELECTRICAL CHARACTERISTICS

被引：55

作者：

KRIKORIAN, E

SNEED, RJ

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1966年 / 37卷 / 10期

关键词：

D O I：

10.1063/1.1707903

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3674 / +

页数：1

共 15 条

[1]

ALTMAN C, PRIVATE COMMUNICATIO

[2]

ALTMAN C, 1962, 9 T NAT VAC S, P174

[3] EFFECTS OF NITROGEN METHANE + OXYGEN ON STRUCTURE + ELECTRICAL PROPERTIES OF THIN TANTALUM FILMS [J].

GERSTENBERG, D ;

CALBICK, CJ .

JOURNAL OF APPLIED PHYSICS, 1964, 35 (02) :402-&

[4] HIGH RESISTIVITY SPUTTERED TANTALUM FILMS FOR MICROELECTRONIC APPLICATIONS [J].

KRIKORIA.E ;

BERSON, BE .

PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1965, 53 (12) :2164-&

[5] EPITAXIAL DEPOSITION OF GERMANIUM BY BOTH SPUTTERING AND EVAPORATION [J].

KRIKORIAN, E ;

SNEED, RJ .

JOURNAL OF APPLIED PHYSICS, 1966, 37 (10) :3665-+

[6]

KRIKORIAN E, AFALTR6589 FIN TECHN

[7] THIN FILMS DEPOSITED BY BIAS SPUTTERING [J].

MAISSEL, LI ;

SCHAIBLE, PM .

JOURNAL OF APPLIED PHYSICS, 1965, 36 (01) :237-&

[8]

MAISSEL LI, 1962, 9 T VAC S AM VAC SOC, P169

[9] TANTALUM-FILM TECHNOLOGY [J].

MCLEAN, DA ;

SCHWARTZ, N ;

TIDD, ED .

PROCEEDINGS OF THE IEEE, 1964, 52 (12) :1450-&

[10] A NEW STRUCTURE IN TANTALUM THIN FILMS (VAPOR DEPOSITION SUPERCONDUCTIVITY SPUTTERING X-RAY DIFFRACTION E) [J].

READ, MH ;

ALTMAN, C .

APPLIED PHYSICS LETTERS, 1965, 7 (03) :51-&

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