RING OSCILLATORS WITH MONOLITHICALLY INTEGRATED-OPTICAL READOUT BASED ON GAAS-ALGAAS FET-SEED TECHNOLOGY

被引：4

作者：

WOODWARD, TK

NOVOTNY, RA

LENTINE, AL

CHIROVSKY, LMF

DASARO, LA

HUI, S

FOCHT, MW

GUTH, GD

SMITH, LE

LEIBENGUTH, RE

机构：

[1] AT&T BELL LABS,NAPERVILLE,IL 60555

[2] AT&T BELL LABS,MURRAY HILL,NJ 07974

[3] AT&T BELL LABS,BREINIGSVILLE,PA 18031

来源：

IEEE ELECTRON DEVICE LETTERS | 1995年 / 16卷 / 02期

关键词：

D O I：

10.1109/55.386030

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Ring oscillators having integrated-optical readout are realized in GaAs-AlGaAs held-effect transistor self-electrooptic-effect-device (FET-SEED) technology-a monolithic integration technology for FET's and normal-incidence multiple quantum-well modulators and detectors. Good agreement between simulated and measured dc-inverter-transfer characteristics is shown. At one bias point, ring oscillator frequencies correspond to unity fan-in and fan-out delay values of 129.5 ps/stage. The power-delay product at this bias point was 306 fJ. Measurements were made on circuits whose transistors had a transconductance of about 80 mS/mm. Simulations of inverter delay are discussed, including load capacitances, and are found to be in good agreement with experiment.

引用

页码：52 / 54

页数：3

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