LOW-TEMPERATURE ANNEALING OF ION-IMPLANTED KNBO3 CHANNEL WAVE-GUIDES

被引：6

作者：

PLISKA, T ^{[1
]}

JUNDT, DH ^{[1
]}

FLUCK, D ^{[1
]}

GUNTER, P ^{[1
]}

机构：

[1] FORSCHUNGSZENTRUM JULICH, FORSCHUNGSZENTRUM, INST SCHICHT & IONENTECH, D-52425 JULICH, GERMANY

来源：

ELECTRONICS LETTERS | 1994年 / 30卷 / 07期

关键词：

LITHIUM NIOBATE; ION IMPLANTATION; OPTICAL WAVE-GUIDES; ANNEALING;

D O I：

10.1049/el:19940392

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Ion implanted KNbO3 channel waveguides were annealed at 150-degrees-C for several hours. The waveguide losses were considerably reduced at visible and near-infrared wavelengths showing a minimum loss coefficient of 1.7dBcm-1 at 633nm. No significant change of the refractive index profile was observed.

引用

页码：562 / 563

页数：2

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