PROPERTIES OF ANODIC OXIDE-FILMS ON N-TYPE GAAS, GAAS0.6P0.4 AND GAP

被引：11

作者：

SIXT, G ^{[1
]}

ZIEGLER, KH ^{[1
]}

FAHRNER, WR ^{[1
]}

机构：

[1] FRAUNHOFER INST,INST ANGEW FESTKORPERPHYS,D-7800 FREIBURG,FED REP GER

来源：

THIN SOLID FILMS | 1979年 / 56卷 / 1-2期

关键词：

D O I：

10.1016/0040-6090(79)90056-7

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Oxide layers were grown anodically on n-type GaAs, GaAs0.6P0.4 and GaP using a 3% aqueous solution of tartaric acid in propylene glycol as electrolyte. The oxide films were examined by secondary ion mass spectrometry and ellipsometry before and after annealing in nitrogen at 400°C. The results show that anodic oxide films on III-V compound semiconductors are composed of several oxide layers. Capacitance-voltage measurements on metal-oxide-semiconductor diodes prepared with anodic oxides revealed electrical instabilities such as a frequency dispersion and a field-induced hyeteresis. These anomalies can be explained by imperfections of the oxide-semiconductor interface. © 1979.

引用

页码：107 / 116

页数：10

共 28 条

[1] LOW DARK-CURRENT MOS PHOTODIODES USING GAAS0.6P0.4 [J].

AHRENKIEL, RK ;

MOSER, F ;

COBURN, T ;

LYU, SL .

JOURNAL OF APPLIED PHYSICS, 1977, 48 (01) :267-269

[2]

ANDERSEN CA, 1969, INT J MASS SPECTROM, V2, P61

[3] ANODIC-OXIDATION OF GALLIUM-ARSENIDE [J].

ARORA, BM ;

BIDNURKAR, MG .

SOLID-STATE ELECTRONICS, 1976, 19 (07) :657-658

[4] ANODIC OXIDE ON GAAS - QUANTITATIVE CHEMICAL DEPTH PROFILES OBTAINED USING AUGER-SPECTROSCOPY AND NEUTRON-ACTIVATION ANALYSIS [J].

CHANG, CC ;

SCHWARTZ, B ;

MURARKA, SP .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1977, 124 (06) :922-926

[5]

CHANG JJ, 1976, P IEEE, V64, P1053

[6] OPTICAL PROPERTIES OF GALLIUM ARSENIDE-PHOSPHIDE [J].

CLARK, GD ;

HOLONYAK, N .

PHYSICAL REVIEW, 1967, 156 (03) :913-+

[7] MECHANISM OF GAAS ANODIZATION [J].

COLEMAN, DJ ;

SHAW, DW ;

DOBROTT, RD .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1977, 124 (02) :239-241

[8]

DEAL BE, 1977, SEMICONDUCTOR SILICO

[9] ELLIPSOMETRY OF ANODIC OXIDE FILMS ON GAAS [J].

DELLOCA, CJ ;

YAN, G ;

YOUNG, L .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (01) :89-&

[10]

FRITZSCHE D, 1977, 2ND S SOL STAT DEV T

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