LOW DARK-CURRENT MOS PHOTODIODES USING GAAS0.6P0.4

被引:5
作者
AHRENKIEL, RK [1 ]
MOSER, F [1 ]
COBURN, T [1 ]
LYU, SL [1 ]
机构
[1] EASTMAN KODAK CO,RES LAB,ROCHESTER,NY 14650
关键词
D O I
10.1063/1.323370
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:267 / 269
页数:3
相关论文
共 9 条
[1]   DIFFUSION LENGTHS OF ELECTRONS AND HOLES IN GAAS [J].
AUKERMAN, LW ;
MILLEA, MF ;
MCCOLL, M .
JOURNAL OF APPLIED PHYSICS, 1967, 38 (02) :685-&
[2]   IMAGING DEVICES USING CHARGE-COUPLED CONCEPT [J].
BARBE, DF .
PROCEEDINGS OF THE IEEE, 1975, 63 (01) :38-67
[3]   CHARACTERISTICS AND POTENTIAL APPLICATIONS OF GAAS1-XPX MIS STRUCTURES [J].
FORBES, L ;
YEARGAN, JR ;
KEUNE, DL ;
CRAFORD, MG .
SOLID-STATE ELECTRONICS, 1974, 17 (01) :25-29
[4]  
Grove A S, 1967, PHYS TECHNOLOGY SEMI
[5]   NEW ANODIC NATIVE OXIDE OF GAAS WITH IMPROVED DIELECTRIC AND INTERFACE PROPERTIES [J].
HASEGAWA, H ;
FORWARD, KE ;
HARTNAGEL, HL .
APPLIED PHYSICS LETTERS, 1975, 26 (10) :567-569
[6]  
IKOMA T, 1976, IEEE T ELECTRON DEVI, V23, P522
[7]  
MICHON GJ, 1973, INT SOLID STATE CIRC, P138
[8]  
SEKELA AM, 1974, GALLIUM ARSENIDE REL, P245
[9]   CATHODOLUMINESCENCE AT P-N JUNCTIONS IN GAAS [J].
WITTRY, DB ;
KYSER, DF .
JOURNAL OF APPLIED PHYSICS, 1965, 36 (04) :1387-&