SCANNING TUNNELING POTENTIOMETRY SPECTROSCOPY (STP/STS)

被引:4
作者
MORITA, S [1 ]
MAITA, Y [1 ]
TAKAHASHI, Y [1 ]
机构
[1] TOHOKU UNIV, ELECT COMMUN RES INST, SENDAI, MIYAGI 980, JAPAN
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1989年 / 28卷 / 11期
关键词
D O I
10.1143/JJAP.28.L2034
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:L2034 / L2036
页数:3
相关论文
共 9 条
[1]   SURFACE ELECTRONIC-STRUCTURE OF SI(111)-(7 X 7) RESOLVED IN REAL SPACE [J].
HAMERS, RJ ;
TROMP, RM ;
DEMUTH, JE .
PHYSICAL REVIEW LETTERS, 1986, 56 (18) :1972-1975
[2]   DIRECT MEASUREMENT OF POTENTIAL STEPS AT GRAIN-BOUNDARIES IN THE PRESENCE OF CURRENT FLOW [J].
KIRTLEY, JR ;
WASHBURN, S ;
BRADY, MJ .
PHYSICAL REVIEW LETTERS, 1988, 60 (15) :1546-1549
[3]   GAAS PN JUNCTION STUDIED BY SCANNING TUNNELING POTENTIOMETRY [J].
MURALT, P .
APPLIED PHYSICS LETTERS, 1986, 49 (21) :1441-1443
[4]   SCANNING TUNNELING MICROSCOPY AND POTENTIOMETRY ON A SEMICONDUCTOR HETEROJUNCTION [J].
MURALT, P ;
MEIER, H ;
POHL, DW ;
SALEMINK, HWM .
APPLIED PHYSICS LETTERS, 1987, 50 (19) :1352-1354
[5]   SCANNING TUNNELING POTENTIOMETRY [J].
MURALT, P ;
POHL, DW .
APPLIED PHYSICS LETTERS, 1986, 48 (08) :514-516
[6]   EXTREMELY LOW-NOISE POTENTIOMETRY WITH A SCANNING TUNNELING MICROSCOPE [J].
PELZ, JP ;
KOCH, RH .
REVIEW OF SCIENTIFIC INSTRUMENTS, 1989, 60 (03) :301-305
[7]  
POHL DW, 1988, NOV P NATO WORKSH PO
[8]   VOLTAGE-DEPENDENT SCANNING TUNNELING MICROSCOPY IMAGING OF SEMICONDUCTOR SURFACES [J].
STROSCIO, JA ;
FEENSTRA, RM ;
NEWNS, DM ;
FEIN, AP .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1988, 6 (02) :499-507
[9]  
YAGI A, 1990, J VAC SCI TECH A JAN