SURFACE SEGREGATION DURING SPUTTERING AT ELEVATED-TEMPERATURES

被引：13

作者：

HOFMANN, S

机构：

来源：

MATERIALS SCIENCE AND ENGINEERING | 1980年 / 42卷 / 1-2期

关键词：

D O I：

10.1016/0025-5416(80)90010-5

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：55 / 58

页数：4

共 14 条

[1] EVALUATION OF CONCENTRATION-DEPTH PROFILES BY SPUTTERING IN SIMS AND AES [J].

HOFMANN, S .

APPLIED PHYSICS, 1976, 9 (01) :59-66

[2] MODEL OF KINETICS AND EQUILIBRIA OF SURFACE SEGREGATION IN MONOLAYER REGIME [J].

HOFMANN, S ;

ERLEWEIN, J .

SURFACE SCIENCE, 1978, 77 (03) :591-602

[3]

HOFMANN S, 1976, Z METALLKD, V67, P189

[4] DETERMINATION OF DIFFUSION-COEFFICIENT OF FOREIGN ATOMS IN METALS VIA SURFACE SEGREGATION [J].

HOFMANN, S ;

ERLEWEIN, J .

SCRIPTA METALLURGICA, 1976, 10 (09) :857-860

[5] DEPTH RESOLUTION IN SPUTTER PROFILING [J].

HOFMANN, S .

APPLIED PHYSICS, 1977, 13 (02) :205-207

[6] ELECTRON-BEAM EFFECTS DURING THE SPUTTER PROFILING OF THIN AU-AG FILMS ANALYZED BY AUGER-ELECTRON SPECTROSCOPY [J].

HOFMANN, S ;

ZALAR, A .

THIN SOLID FILMS, 1979, 56 (03) :337-342

[7] INFLUENCE OF SURFACE-DIFFUSION ON RESULTS OF SURFACE ANALYSIS - MODEL CALCULATION [J].

JAGER, I .

SURFACE SCIENCE, 1978, 78 (01) :93-103

[8] COVERAGE OF FOREIGN ATOMS ON SURFACES AS A FUNCTION OF ADSORPTION, SPUTTERING, AND DIFFUSION RATES [J].

KIRCHHEIM, R ;

HOFMANN, S .

SURFACE SCIENCE, 1979, 83 (01) :296-300

[9] METALS AS SINKS AND BARRIERS FOR INTERSTITIAL DIFFUSION WITH EXAMPLES FOR OXYGEN DIFFUSION IN COPPER, NIOBIUM AND TANTALUM [J].

KIRCHHEIM, R .

ACTA METALLURGICA, 1979, 27 (05) :869-878

[10]

MATHIEU HJ, 1978, J MICROSC SPECT ELEC, V3, P113

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