ELECTROLUMINESCENCE IN A ZNTE-ZNSE HETEROJUNCTION

被引：2

作者：

LEFLOCH, G

ARNOULD, H

机构：

来源：

SOLID-STATE ELECTRONICS | 1973年 / 16卷 / 08期

关键词：

D O I：

10.1016/0038-1101(73)90101-9

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：941 / 944

页数：4

共 14 条

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AVEN, M .

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[2]

AVEN M, 1966, J APPL PHYS, V38, P2302

[3] LUMINESCENCE ASSOCIATED WITH SHALLOW ACCEPTOR CENTERS IN ZNTE [J].

CROWDER, BL ;

PETTIT, GD .

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[4] MIS ELECTROLUMINESCENT DIODES IN ZNTE [J].

DONNELLY, JP ;

FOYT, AG ;

LINDLEY, WT ;

ISELER, GW .

SOLID-STATE ELECTRONICS, 1970, 13 (06) :755-&

[5]

Dubenskii K. K., 1970, Fizika i Tekhnika Poluprovodnikov, V4, P986

[6]

HOPFIELD JJ, 1967, 2 6 SEMICONDUCTING C

[7]

KOT MV, 1965, FIZ TVERD TELA+, V7, P1001

[8]

MARINE J, 1970, PRIVATE COMMUNICATIO

[9] DOUBLE INJECTION IN LONG SILICON P-PI-N STRUCTURES [J].

MAYER, JW ;

MARSH, OJ ;

BARON, R .

JOURNAL OF APPLIED PHYSICS, 1968, 39 (03) :1447-&

[10] PHOTOLUMINESCENCE OF ION-IMPLANTED OXYGEN IN ZNTE [J].

MERZ, JL .

JOURNAL OF APPLIED PHYSICS, 1971, 42 (06) :2463-&

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