MIS ELECTROLUMINESCENT DIODES IN ZNTE

被引：23

作者：

DONNELLY, JP

FOYT, AG

LINDLEY, WT

ISELER, GW

机构：

来源：

SOLID-STATE ELECTRONICS | 1970年 / 13卷 / 06期

关键词：

D O I：

10.1016/0038-1101(70)90063-8

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：755 / &

共 12 条

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THOMAS, DG .

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[5]

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LINDLEY, WT ;

WOLFE, CM ;

DONNELLY, JP .

SOLID-STATE ELECTRONICS, 1969, 12 (04) :209-&

[7] TYPE CONVERSION AND P-N JUNCTION FORMATION IN ION-IMPLANTED ZNTE [J].

HOU, SL ;

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MARLEY, JA .

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[8] NEW ELECTROLUMINESCENT SPECTRUM IN ZNTE RESULTING FROM OXYGEN INCORPORATION [J].

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[9] ISOELECTRONIC OXYGEN TRAP IN ZNTE [J].

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[10] PHOTO-N-P JUNCTIONS IN ZNTE [J].

MOREHEAD, FF ;

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IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1968, 12 (06) :458-&

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