PHOTOLUMINESCENCE OF ION-IMPLANTED OXYGEN IN ZNTE

被引:25
作者
MERZ, JL
机构
关键词
D O I
10.1063/1.1660563
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:2463 / &
相关论文
共 14 条
[1]  
BROSER I, 1967, PHYSICS CHEM 2 6 COM, P508
[2]   OPTICAL PROPERTIES OF TELLURIUM AS AN ISOELECTRONIC TRAP IN CADMIUM SULFIDE [J].
CUTHBERT, JD ;
THOMAS, DG .
JOURNAL OF APPLIED PHYSICS, 1968, 39 (03) :1573-&
[3]  
JOHNSON WS, 1969, PROJECTED RANGE STAT
[4]   VAPOR GROWTH OF HIGH RESISTIVITY ZNTE [J].
JORDAN, AS ;
DERICK, L .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1969, 116 (10) :1424-&
[5]   CATHODOLUMINESCENCE OF OXYGEN-IMPLANTED ZINC-DOPED GALLIUM PHOSPHIDE [J].
LACEY, SD ;
LARGE, LN ;
WIGHT, DR .
ELECTRONICS LETTERS, 1969, 5 (10) :203-&
[6]  
MACRAE AU, P INT C ION IMPLANTA
[7]   PHOTOLUMINESCENCE OF OXYGEN IN ZNTE INTRODUCED BY ION IMPLANTATION [J].
MERZ, JL ;
FELDMAN, LC .
APPLIED PHYSICS LETTERS, 1969, 15 (05) :129-&
[8]   ISOELECTRONIC OXYGEN TRAP IN ZNTE [J].
MERZ, JL .
PHYSICAL REVIEW, 1968, 176 (03) :961-&
[9]  
MERZ JL, 1970, 10TH P INT C PHYS SE, P251
[10]  
MERZ JL, P INT C ION IMPLANTA