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CATHODOLUMINESCENCE OF OXYGEN-IMPLANTED ZINC-DOPED GALLIUM PHOSPHIDE

被引：7
作者：
LACEY, SD
LARGE, LN
WIGHT, DR
机构：
[1] Services Electronics Research Laboratory Baidock, Herts
来源：
ELECTRONICS LETTERS | 1969年 / 5卷 / 10期
关键词：
D O I：
10.1049/el:19690153
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Oxygen has been introduced by ion implantation into zinc-doped epitaxial gallium phosphide grown from the vapour phase. After annealing, cathodoluminescence from zinc-oxygen pairs is observed, having an efficiency approaching that of bulk zinc-oxygen doped solution-grown material. For a zinc concentration of 2 x 1017cm-3, an optimum oxygen concentration for cathodoluminescence of 3 x 1018 cm-3 is exhibited. © 1969, The Institution of Electrical Engineers. All rights reserved.
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页码：203 / &
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