MOLECULAR-BEAM EPITAXY OF SILICON-BASED HETEROSTRUCTURE AND ITS APPLICATION TO NOVEL DEVICES

Recent progress in Si heterostructure engineering is reviewed from physical and technological viewpoints. Advanced methods to fabricate atomic layer doping structures, Si on insulator structures, and strain controlled double heterostructures, i.e. Si/SiGe/Si and Si/silicide/Si using molecular beam epitaxy, are developed. Detailed characterization provides a comprehensive understanding of the physical phenomena behind these new crystal growth techniques. Application of these advanced methods to novel device fabrication is also discussed.