SI-GE STRAINED LAYER SUPERLATTICES

被引：21

作者：

ABSTREITER, G

机构：

来源：

THIN SOLID FILMS | 1989年 / 183卷

关键词：

D O I：

10.1016/0040-6090(89)90423-9

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：1 / 8

页数：8

共 36 条

[1] STRAIN-INDUCED TWO-DIMENSIONAL ELECTRON-GAS IN SELECTIVELY DOPED SI/SIXGE1-X SUPERLATTICES [J].

ABSTREITER, G ;

BRUGGER, H ;

WOLF, T ;

JORKE, H ;

HERZOG, HJ .

PHYSICAL REVIEW LETTERS, 1985, 54 (22) :2441-2444

[2] SILICON GERMANIUM STRAINED LAYER SUPERLATTICES [J].

ABSTREITER, G ;

EBERL, K ;

FRIESS, E ;

WEGSCHEIDER, W ;

ZACHAI, R .

JOURNAL OF CRYSTAL GROWTH, 1989, 95 (1-4) :431-438

[3]

ABSTREITER G, 1987, SPIE, V792, P77

[4]

ABSTREITER G, 1988, IN PRESS NATO ASI SE

[5]

ABSTREITER G, 1986, SPRINGER SERIES SOLI, V67, P130

[6] GEXSI1-X/SI STRAINED-LAYER SUPERLATTICE GROWN BY MOLECULAR-BEAM EPITAXY [J].

BEAN, JC ;

FELDMAN, LC ;

FIORY, AT ;

NAKAHARA, S ;

ROBINSON, IK .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1984, 2 (02) :436-440

[7] ANNEALING EFFECTS IN SHORT-PERIOD SI-GE STRAINED LAYER SUPERLATTICES [J].

BRUGGER, H ;

FRIESS, E ;

ABSTREITER, G ;

KASPER, E ;

KIBBEL, H .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1988, 3 (12) :1166-1170

[8]

EBERL K, 1989, NATO ADV SCI I E-APP, V160, P153

[9] IMPROVEMENT OF STRUCTURAL-PROPERTIES OF SI/GE SUPERLATTICES [J].

EBERL, K ;

FRIESS, E ;

WEGSCHEIDER, W ;

MENCZIGAR, U ;

ABSTREITER, G .

THIN SOLID FILMS, 1989, 183 :95-103

[10]

EBERL K, 1987, J PHYS-PARIS, V46, P329

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